US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Resistive random access memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,179, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Resistive random access memory device" was invented by Jheng-Hong Jiang (Hsinchu, Taiwan), Cheung Cheng (Hsinchu, Taiwan) and Chia-Wei Liu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material c...