US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Nano-structure transistors with air inner spacers and methods forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,242, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Nano-structure transistors with air inner spacers and methods forming same" was invented by Wei-Min Liu (Hsinchu, Taiwan), Cheng-Yen Wen (Taichung, Taiwan), Li-Li Su (Chubei, Taiwan), Chii-Horng Li (Zhubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a stack of layers, which includes a plurality of semiconductor nano structures and a plurality of sacrificial layers. The plurality of semiconductor nano structures and the plurality of sacrificial layers are arranged alternatingly...