US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Multiple back side/buried power rail (BPR) cell including field-effect transistors with air void between two adjacent BPR cells" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,255, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multiple back side/buried power rail (BPR) cell including field-effect transistors with air void between two adjacent BPR cells" was invented by Te-Hsin Chiu (Miaoli County, Taiwan), Kam-Tou Sio (Zhubei, Taiwan) and Jiann-Tyng Tzeng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate. The semiconductor device includes a first fin protruding from the semiconductor substrate and extending along a first direction. The semiconductor device includes a second fin protruding from the s...