US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "MRAM structure with high TMR and high PMA" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,370, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"MRAM structure with high TMR and high PMA" was invented by Ming-Yen Chuang (Hsinchu, Taiwan) and Wenchin Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an integrated chip, the method includes forming a memory cell stack over a substrate. The memory cell stack comprises a tunnel barrier layer, a free layer over the tunnel barrier layer, a capping dielectric layer over the free layer, and a conductive capping layer on the capping dielectric l...