US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Method of making semiconductor device including metal insulator metal capacitor" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,186, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of making semiconductor device including metal insulator metal capacitor" was invented by Yan-Jhih Huang (Hsinchu, Taiwan), Chun-Yuan Hsu (Hsinchu, Taiwan), Chien-Chung Chen (Hsinchu, Taiwan) and Yung-Hsieh Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of making a semiconductor device includes forming a circuit layer over a substrate. The method further includes depositing an insulator over the substrate. The method further includes patterning the insulator to define a test line trench, a first trench, and...