US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Method for forming semiconductor device structure with a cap layer" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,234, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming semiconductor device structure with a cap layer" was invented by Ming-Lung Cheng (Kaohsiung, Taiwan), Huang-Hsuan Lin (Hsinchu, Taiwan) and Chih-Chieh Yeh (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure includes forming nanostructures over a substrate. The method also includes forming a work function layer surrounding the nanostructures. The method also includes forming spacers over opposite sides of the work function layer. The method also includes forming a f...