US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Memory cell and method of forming the memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,457, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory cell and method of forming the memory cell" was invented by Meng-Sheng Chang (Hsinchu County, Taiwan) and Chia-En Huang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a memory cell includes: providing a semiconductor substrate; forming an active region on the semiconductor substrate; providing a first conductive line over a first portion of the active region to form a first transistor coupled to a bit line of the memory cell; providing a second conductive line over a second portion of the acti...