US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Leakage reduction for multi-gate devices" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,192, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Leakage reduction for multi-gate devices" was invented by Chao-Wei Hsu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods and semiconductor structures are provided. A method according to the present disclosure includes depositing a top epitaxial layer over a substrate, forming a fin structure from the top epitaxial layer and a portion of the substrate, recessing a source/drain region of the fin structure to form a source/drain recess, conformally depositing a semiconductor layer over surfaces of the source/drain recess, et...