US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Isolation with multi-step structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,663, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation with multi-step structure" was invented by Ta-Chun Lin (Hsinchu, Taiwan), Tien-Shao Chuang (Hsinchu, Taiwan), Kuang-Cheng Tai (Hsinchu, Taiwan), Chun-Hung Chen (Hsinchu, Taiwan), Chih-Hung Hsieh (Hsin-Chu, Taiwan), Kuo-Hua Pan (Hsinchu, Taiwan) and Jhon-Jhy Liaw (Zhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate including a first well region of a first conductivity type. The semiconductor device st...