US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Isolation structures in multi-gate field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,220, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Isolation structures in multi-gate field-effect transistors" was invented by Ting-Yeh Chen (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan) and Chia-Pin Lin (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a structure having a substrate, fins and an isolation structure over the substrate, wherein each fin includes first and second semiconductor layers alternatingly stacked. The method further includes depositing a first dielectric layer over top and sidewalls of the fins and over a top surface ...