US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Fin field-effect transistor device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,625, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device and method of forming the same" was invented by Min-Hsiu Hung (Tainan, Taiwan), Chien Chang (Hsinchu, Taiwan), Yi-Hsiang Chao (New Taipei, Taiwan), Hung-Yi Huang (Hsinchu, Taiwan) and Chih-Wei Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming source/drain regions on opposing sides of a gate structure, where the gate structure is over a fin and surrounded by a first dielectric layer; forming openings in the first dielectric layer to ex...