ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,469, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"DRAM computation circuit and method" was invented by Chieh Lee (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan), Wen-Chang Cheng (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory circuit includes a boundary layer, a first circuit positioned on a first side of the boundary layer and including a DRAM array including a plurality of DRAM cells, a second circuit positioned on a second side of the boundary layer opposite the first side and including a computation...