US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,707, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same" was invented by Yun-Feng Kao (New Taipei, Taiwan) and Katherine H. Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An embodiment inverter circuit may include a gate electrode formed over an interlayer dielectric layer, a gate dielectric layer formed over the gate electrode, a first-conductivity-type semiconductor layer formed over the gate dielectric layer, a second-conductivity-type semiconductor layer fo...