US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "3T memory with enhanced speed of operation and data retention" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,176, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"3T memory with enhanced speed of operation and data retention" was invented by Hung-Li Chiang (Taipei, Taiwan), Jer-Fu Wang (Taipei, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Meng-Fan Chang (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a plurality of memory cells, at least one of the plurality of memory cells includes a first transistor, a second transistor, and a third transistor. The first transistor includes a first drain/source path and a first gate structure electrically coupled to a write wor...