US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Transistors with stacked semiconductor layers as channels" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,649, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistors with stacked semiconductor layers as channels" was invented by Tsung-Hsi Yang (Zhubei, Taiwan), Ming-Hua Yu (Hsinchu, Taiwan) and Jeng-Wei Yu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes depositing a p-type semiconductor layer over a portion of a semiconductor substrate, depositing a semiconductor layer over the p-type semiconductor layer, wherein the semiconductor layer is free from p-type impurities, forming a gate stack directly over a first portion of the sem...