US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Transistor gates and methods of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,664, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gates and methods of forming thereof" was invented by Shih-Yao Lin (New Taipei, Taiwan), Chih-Han Lin (Hsinchu, Taiwan), Shu-Uei Jang (Hsinchu, Taiwan), Ya-Yi Tsai (Hsinchu, Taiwan) and Shu-Yuan Ku (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a semiconductor substrate and a first gate stack over the semiconductor substrate, the first gate stack being between a first gate spacer and a second gate spacer. The device further includes a second gate stack over the semiconductor substrate between the first ...