US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Through-substrate vias with improved connections" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,996, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Through-substrate vias with improved connections" was invented by Jing-Cheng Lin (Hsinchu, Taiwan) and Ku-Feng Yang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, and a plurality of dielectric layers over the substrate. A plurality of metallization layers is formed in the plurality of dielectric layers, wherein at least one of the plurality of metallization layers comprises a metal pad. A through-substrate via (TSV) extends from the top level of the plurality of the dielectric layers to a bo...