US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Structure for embedded gettering in a silicon on insulator wafer" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,943, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Structure for embedded gettering in a silicon on insulator wafer" was invented by Pu-Fang Chen (Hsinchu, Taiwan), Shi-Chieh Lin (Hsinchu, Taiwan), Victor Y. Lu (Foster City, Calif.) and Yeur-Luen Tu (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A representative method of manufacturing a silicon-on-insulator (SOI) substrate includes steps of depositing an etch stop layer on a dummy wafer, growing an epitaxial silicon layer on the etch stop layer, forming a gettering layer on the epitaxial silicon layer, bonding a buried oxide lay...