US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Structure and method for MRAM devices with a slot via" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,772, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Structure and method for MRAM devices with a slot via" was invented by Chih-Fan Huang (Kaohsiung, Taiwan), Hsiang-Ku Shen (Hsinchu, Taiwan), Liang-Wei Wang (Hsinchu, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan) and Yen-Ming Chen (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a third metal layer immediately above a second metal layer that is over a first metal layer. The second metal layer includes magnetic tunneling junction (MTJ) devices in a memory region and a first conductive feature in a...