US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Source/drains in semiconductor devices and methods of forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,633, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drains in semiconductor devices and methods of forming thereof" was invented by Chi-Ming Chen (Zhubei, Taiwan), Kuei-Ming Chen (New Taipei, Taiwan), Po-Chun Liu (Hsinchu, Taiwan) and Chung-Yi Yu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a gate structure over a silicon on insulator (SOI) substrate. The SOI substrate comprising: a base semiconductor layer; an insulator layer over the base semiconductor layer; and a top semiconductor layer over the insulator layer. The method further includes dep...