US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Source/drain regions of semiconductor devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,671, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Source/drain regions of semiconductor devices and methods of forming the same" was invented by Wei Hao Lu (Taoyuan, Taiwan), Yi-Fang Pai (Hsinchu, Taiwan), Cheng-Wen Cheng (Hsinchu, Taiwan), Li-Li Su (Chubei, Taiwan) and Chien-I Kuo (Chiayi County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a first fin and a second fin extending from a substrate and an epitaxial source/drain region. The epitaxial source/drain region includes a first portion grown on the first fin and a second portion grown on the second ...