US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,618, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor transistor device includes backside via electrically connecting epitaxial source/drain structures and method for forming the same" was invented by Lo-Heng Chang (Hsinchu, Taiwan), Li-Zhen Yu (New Taipei, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan), Huan-Chieh Su (Changhua County, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor strip and semiconductor layers vertically stacked over a front side of the semiconductor strip; forming a gate structur...