US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Semiconductor device with gate" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,625, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with gate" was invented by Jung-Chi Jeng (Tainan, Taiwan), I-Chih Chen (Tainan, Taiwan), Wen-Chang Kuo (Tainan, Taiwan), Ying-Hao Chen (Tainan, Taiwan), Ru-Shang Hsiao (Jhubei, Taiwan) and Chih-Mu Huang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device is provided. The semiconductor device includes a semiconductor substrate. The semiconductor device includes an isolation structure in the semiconductor substrate. The isolation structure surrounds an active region of the semiconductor subs...