US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,675, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having nanosheet transistor and methods of fabrication thereof" was invented by Mao-Lin Huang (Hsinchu, Taiwan), Jia-Ni Yu (New Taipei, Taiwan), Lung-Kun Chu (New Taipei, Taiwan), Chung-Wei Hsu (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The structure includes a first gate electrode layer having at least three surfaces surrounded by a first intermixed la...