ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,654, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device" was invented by Cheng-Hsien Wu (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a channel layer, a gate structure, a first gate spacer, and a second gate spacer. The gate structure wraps around the channel layer. The first gate spacer and the second gate spacer are on opposite sides of the gate structure. The first gate spacer has a first portion and a second portion between the gate structure and the first portion of the first gate spacer, and a dopant concentration of the second portion ...