US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Radical-activated etching of metal oxides" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,968, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Radical-activated etching of metal oxides" was invented by Chansyun David Yang (Shinchu, Taiwan), Chan-Lon Yang (Taipei, Taiwan), Keh-Jeng Chang (Hsinchu, Taiwan) and Perng-Fei Yuh (Walnut Creek, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes methods and systems for radical-activated etching of a metal oxide. The system includes a chamber, a wafer holder configured to hold a wafer with a metal oxide disposed thereon, a first gas line fluidly connected to the chamber and configured to deliver a gas to the cha...