US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Polysilicon resistor structures" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,668, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Polysilicon resistor structures" was invented by Meng-Han Lin (Hsinchu, Taiwan), Wen-Tuo Huang (Tainan, Taiwan) and Yong-Shiuan Tsair (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method for forming polysilicon resistors with high-k dielectrics and polysilicon gate electrodes. The method includes depositing a resistor stack on a substrate having spaced apart first and second isolation regions. Further the method includes patterning the resistor stack to form a polysilicon resistor structure on th...