US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Method to embed planar FETs with finFETs" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,672, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method to embed planar FETs with finFETs" was invented by Harry-Hak-Lay Chuang (Zhubei, Taiwan), Wei Cheng Wu (Zhubei, Taiwan), Li-Feng Teng (Hsinchu, Taiwan) and Li-Jung Liu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method to embed planar field-effect transistor (FETs) with fin field-effect transistors (finFETs). A semiconductor substrate is patterned to define a mesa and a fin. A trench isolation structure is formed overlying the semiconductor substrate ...