US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Method of forming fully strained channels" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,638, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming fully strained channels" was invented by Shahaji B. More (Hsinchu, Taiwan), Shu Kuan (Keelung, Taiwan) and Cheng-Han Lee (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming an N well and a P well in a substrate; depositing a first layer having silicon over the N well and the P well; depositing a first dielectric layer over the first layer; forming a resist pattern over the first dielectric layer, the resist pattern providing an opening directly above the N well; etching the first diele...