US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Method for manufacturing semiconductor structure with material in monocrystalline phase" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,928, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for manufacturing semiconductor structure with material in monocrystalline phase" was invented by Kai-Fang Cheng (Hsinchu, Taiwan) and Hsiao-Kang Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure includes: forming a dielectric layer on a base structure; forming a trench in the dielectric layer to expose the base structure; forming a metal contact in the trench; and performing a plurality of first atomic layer deposition (ALD) cycles to form a plurality of first ato...