US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Memory structure with optimized latch clock design" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,386,383, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Memory structure with optimized latch clock design" was invented by Ming-Hung Chang (Tainan, Taiwan), Luping Kong (Nanjing, China), Jun Xie (Nanjing, China) and Ching-Wei Wu (Nantou County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided and includes a memory array, first to second latch circuits and a gating circuit. Read and write operations are triggered by first and second edges of an internal clock signal respectively. The first latch circuit generates a first output signal in response to an input signal ...