US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Memory device including separate negative bit line" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,768, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device including separate negative bit line" was invented by Chih-Yu Lin (Taichung, Taiwan), Yi-Hsin Nien (Hsinchu, Taiwan), Hidehiro Fujiwara (Hsinchu, Taiwan) and Yen-Huei Chen (Jhudong Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are related to a memory device. In one aspect, a memory device includes a set of memory cells. In one aspect, the memory device includes a first bit line extending along a direction. The first bit line may be coupled to a subset of the set of memory cells disposed along the di...