ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,674, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Low resistance fill metal layer material as stressor in metal gates" was invented by Mrunal A. Khaderbad (Hsinchu, Taiwan), Ziwei Fang (Hsinchu, Taiwan), Keng-Chu Lin (Ping-Tung, Taiwan) and Hsueh Wen Tsau (Miaoli County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit (IC) device includes a semiconductor substrate having a first plurality of stacked semiconductor layers in a p-type transistor region and a second plurality of stacked semiconductor layers in a n-type transistor region. A gate dielectric layer wraps aroun...