US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "High electron affinity dielectric layer to improve cycling" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,814, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"High electron affinity dielectric layer to improve cycling" was invented by Chao-Yang Chen (Hsinchu, Taiwan), Chun-Yang Tsai (Hsinchu, Taiwan), Kuo-Ching Huang (Hsinchu, Taiwan), Wen-Ting Chu (Kaohsiung, Taiwan) and Cheng-Jun Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a memory cell comprising a high electron affinity dielectric layer at a bottom electrode. The high electron affinity dielectric layer is one of multiple different dielectric layers vertically s...