US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Full well capacity for image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,710, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Full well capacity for image sensor" was invented by Kai-Yun Yang (Tainan, Taiwan), Chun-Yuan Chen (Tainan, Taiwan) and Ching I Li (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a first dopant having a first doping type. A deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the firs...