US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Formation method of shallow trench isolation" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,662, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Formation method of shallow trench isolation" was invented by Szu-Ying Chen (Hsinchu, Taiwan), Chia-Cheng Chen (Hsinchu, Taiwan), Liang-Yin Chen (Hsinchu, Taiwan) and Sen-Hong Syue (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes etching trenches in a substrate to form fin structures, depositing a liner layer to line the trenches, filling the trenches with an insulating layer, performing an ion implantation process to the insulating layer, after performing the ion implan...