US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Fin field-effect transistor device and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,667, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fin field-effect transistor device and method" was invented by Meng Jhe Tsai (Hsinchu, Taiwan), Hong-Jie Yang (Hsinchu, Taiwan), Meng-Chun Chang (Taipei, Taiwan), Hao Chiang (Hsinchu, Taiwan), Chia-Ying Lee (New Taipei, Taiwan), Huan-Just Lin (Hsinchu, Taiwan) and Chuan Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes: forming a metal gate structure over a fin that protrudes above a substrate, the metal gate structure being surrounded by an interlayer dielectric (ILD) layer; r...