US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Field effect transistor with air spacer and method" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,641, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with air spacer and method" was invented by Yi-Bo Liao (Hsinchu, Taiwan), Yu-Xuan Huang (Hsinchu, Taiwan), Cheng-Ting Chung (Hsinchu, Taiwan) and Hou-Yu Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, a gate structure, a capping layer, a source/drain region, a source/drain contact, and an air spacer. The gate structure wraps around at least one vertical stack of nanostructure channels over the substrate. The capping layer is on the gate structure. The source/drain region a...