US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Enlarging spacer thickness by forming a dielectric layer over a recessed interlayer dielectric" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,669, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Enlarging spacer thickness by forming a dielectric layer over a recessed interlayer dielectric" was invented by Chih-Han Lin (Hsinchu, Taiwan), Che-Cheng Chang (New Taipei, Taiwan) and Horng-Huei Tseng (HsinChu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An exemplary semiconductor device includes first spacers disposed along sidewalls of a first gate structure and second spacers disposed along sidewalls of a second gate structure. A source/drain region is disposed between the first gate structure and the second gate structure. A first I...