US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 12 for "Electrostatic discharge (ESD) protection circuit and method of operating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,388,250, issued on Aug. 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Electrostatic discharge (ESD) protection circuit and method of operating the same" was invented by Yu-Hung Yeh (Hsinchu, Taiwan), Wun-Jie Lin (Hsinchu, Taiwan) and Jam-Wem Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electrostatic discharge (ESD) protection circuit includes a first and second diode in a semiconductor wafer, an ESD clamp circuit and a first conductive structure on a backside of a semiconductor wafer. The first diode is coupled between an input output (IO) pad and a first node. The second diode is coupl...