US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 12 for "Dipole-engineered high-k gate dielectric and method forming same" (Taiwanese, Malaysian Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,387,935, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dipole-engineered high-k gate dielectric and method forming same" was invented by Te-Yang Lai (Hsinchu, Taiwan), Chun-Yen Peng (Hsinchu, Taiwan), Sai-Hooi Yeong (Cheras, Malaysia) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming an oxide layer on a semiconductor region, and depositing a first high-k dielectric layer over the oxide layer. The first high-k dielectric layer is formed of a first high-k dielectric material. The method further includes depositing a second high-k dielectric layer o...