ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,694, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Data storage element and manufacturing method thereof" was invented by Hung-Li Chiang (Taipei, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan), Jung-Piao Chiu (Kaohsiung, Taiwan), Tzu-Chiang Chen (Hsinchu, Taiwan) and Yu-Sheng Chen (Taoyuan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein, in some embodiments, is a memory device. The memory device includes a bottom electrode disposed over a substrate and a top electrode disposed over the bottom electrode. An upper surface of the bottom electrode faces away from the substrate. A ...