ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,670, issued on Aug. 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Air spacer and capping structures in semiconductor devices" was invented by Lin-Yu Huang (Hsinchu, Taiwan), Chia-Hao Chang (Hsinchu, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device with air spacers and air caps and a method of fabricating the same are disclosed. The semiconductor device includes a substrate and a fin structure disposed on the substrate. The fin structur...