US Patent Issued to Taiwan Semiconductor Manufacturing on April 8 for "Sidewall spacer structure for memory cell" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,182, issued on April 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Sidewall spacer structure for memory cell" was invented by Yao-Wen Chang (Taipei, Taiwan), Chung-Chiang Min (Zhubei, Taiwan), Harry-Hak-Lay Chuang (Zhubei, Taiwan), Hung Cho Wang (Taipei, Taiwan), Tsung-Hsueh Yang (Taichung, Taiwan), Yuan-Tai Tseng (Zhubei, Taiwan), Sheng-Huang Huang (Hsinchu, Taiwan) and Chia-Hua Lin (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards an integrated chip comprising a memory cell. The memory cell is disposed within a dielectric struct...