US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 8 for "Semiconductor memory device and method for fabricating the same" (Taiwanese, Singaporean Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,072, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory device and method for fabricating the same" was invented by Harry-Hak-Lay Chuang (Zhubei, Singapore), Sheng-Huang Huang (Hsinchu, Taiwan), Shih-Chang Liu (Kaohsiung County, Taiwan) and Chern-Yow Hsu (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion ...