ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,557, issued on April 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method" was invented by Kuei-Lun Lin (Keelung, Taiwan), Chia-Wei Hsu (New Taipei, Taiwan), Xiong-Fei Yu (Hsinchu, Taiwan), Chi On Chui (Hsinchu, Taiwan), Chih-Yu Hsu (Xinfeng Township, Taiwan) and Jian-Hao Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In an embodiment, a method includes: depositing a gate dielectric layer on a first fin and a second fin, the first fin and the second fin extending away from a substrate in a first direction, a distance between the first fin and the second fin decreasin...