US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 8 for "Selective dual silicide formation" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,602, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Selective dual silicide formation" was invented by Peng-Wei Chu (Hsinchu, Taiwan), Sung-Li Wang (Hsinchu, Taiwan) and Yasutoshi Okuno (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device and a method of making the same are provided. A method according to the present disclosure includes forming a first type epitaxial layer over a second type source/drain feature of a second type transistor, forming a second type epitaxial layer over a first type source/drain feature of a first type transistor, selectively depositin...