US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 8 for "Methods of forming contact features in field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,605, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Methods of forming contact features in field-effect transistors" was invented by Yi-Hsiung Lin (Hsinchu County, Taiwan), Yi-Hsun Chiu (Hsinchu County, Taiwan) and Shang-Wen Chang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a first semiconductor fin and a second semiconductor fin adjacent to the first semiconductor fin. The first and the second semiconductor fins extend lengthwise along a first direction over a substrate. A metal gate structure is disposed over the first and second semic...