US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on April 8 for "Method of forming semiconductor memory device" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,274,077, issued on April 8, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method of forming semiconductor memory device" was invented by Wei-Chih Wen (Hsinchu, Taiwan), Yu-Wei Jiang (Hsinchu, Taiwan) and Han-Jong Chia (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor memory device includes: forming a stack structure on a substrate, the stack structure including a plurality of dielectric layers and a plurality of sacrificial layers alternatingly stacked in a Z direction substantially perpendicular to the substrate; forming a plurality of source/drain trenches in the s...