US Patent Issued to Taiwan Semiconductor Manufacturing on April 8 for "Memory array channel regions" (Taiwanese Inventors)

ALEXANDRIA, Va., April 9 -- United States Patent no. 12,272,750, issued on April 8, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory array channel regions" was invented by Kuo-Chang Chiang (Hsinchu, Taiwan), Hung-Chang Sun (Kaohsiung, Taiwan), Sheng-Chih Lai (Hsinchu, Taiwan), TsuChing Yang (Taipei, Taiwan) and Yu-Wei Jiang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory cell includes a ferroelectric (FE) material contacting a word line; and an oxide semiconductor (OS) layer contacting a source line and a bit line, wherein the FE material is disposed between the OS layer and the word line. The OS layer comprises: a first region adjacent the FE mat...